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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS For high breakdown voltage general amplification For video output amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector- emitter voltage Emitter-base voltage Collector current Collector current-peak HAN INC SEM GE Open emitter OND IC CONDITIONS TOR UC VALUE 250 250 7 0.1 0.15 1.2*1 UNIT V V V A A Open base Open collector PC Collector power dissipation TC=25ae 4* 2 W Tj Tstg Junction temperature Storage temperature -55 150 +150 ae ae Note :*1: Without heat sink *2: With a 100 A 100 A 2 mm A1 heat sink Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector cutoff current Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS VCE=250V;RBE=100k| IE=0.1mA ;IC=0 IC=50mA ;IB=5m A IC=40mA ; VCE=20V IC=40mA ; VCE=20V IC=5mA ; VCE=50V IE=0; VCB=50V;f=1MHz IE=-10mA ; VCE=10V,f=200MHz 40 30 3 100 4.5 pF MHz 7 1.2 1.2 MIN TYP. MAX 100 UNIT |I A V V V SYMBOL ICER V(BR)EBO VCEsat VBE hFE-1 hFE-2 COB fT HAN INC SEM GE OND IC TOR UC 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2258 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258 4 |
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